po wer ma n a g e m ent & m ulti m ark et sic silicon carbide diode final da ta s heet rev. 2 . 0 , <201 2 - 0 3 - 2 3 > thin q! tm s ic sc ho ttk y dio de 1200v sic schottky diode id w 1 0 s 1 2 0
1) j - std20 and jesd22 final data sheet 2 rev. 2 . 0 , 201 2 - 0 3 - 2 3 1 description features ? revolutionary semiconductor material - silicon carbide ? b enchmark s witching behavior ? no reverse recovery/ no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb - free lea d plating; rohs compliant ? qualified according to jedec 1) for target applications ? optimized for high temperature operation benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures ? reduced emi applications ? smps; ccm pfc ? solar applications; ups; motor drives table 1 key performance parameters paramet er value unit v dc 1200 v q c @ v r = 400v 36 nc i f @ t c < 1 4 0 c 10 a table 2 pin definition pin 1 pin 2 pin 3 n.c. c a type / ordering code package marking rel a ted links IDW10S120 pg - to247 - 3 d10s120 www.infineon.com/sic IDW10S120 th inq!? sic schottky diode 1 2 3 the 1200v family of infineon sic schottky diodes has emerged over the years as the industry standard and is now being extended with the idwxxs120 product family in the to247 package. the very good thermal characteristics of the to247 in combination with the low v f of the 1200v diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. with the introduction o f this package, infineon now offers a current capability of up to 30a in the 1200v range. 1 2 3 case
thinq! tm sic schottky diode IDW10S120 table of conte nts final data sheet 3 rev. 2 . 0 , 201 2 - 0 3 - 2 3 table of contents 1 description ................................ ................................ ................................ ................................ .......... 2 2 maximum ratings ................................ ................................ ................................ ................................ 4 3 thermal characteristics ................................ ................................ ................................ ..................... 4 4 electrical characteristics ................................ ................................ ................................ ................... 5 5 electrical character istics diagrams ................................ ................................ ................................ .. 6 6 package outlines ................................ ................................ ................................ ................................ 8 7 revision history ................................ ................................ ................................ ................................ . 9
thinq! tm sic schottky diode IDW10S120 maximum ratings final data sheet 4 rev. 2 . 0 , 201 2 - 0 3 - 2 3 2 maximum ratings table 3 maximum ratings parameter symbol values unit note/test condition min. typ. max. continuous forward current i f C C 10 a t c < 1 4 0 c, d=1 surge non - repetitive forward current, sine halfwave i f ,sm C C 53 t c = 25c, t p =10 ms C C 44 t c = 150c, t p =10 ms non - repetitive peak forward current i f ,max C C 266 t c = 2 5 c, t p =10 s i2t value i2dt C C 14 a2s t c = 25c, t p =10 ms C C 10 t c = 150c, t p =10 ms repetitive peak reverse voltage v rrm C C 1200 v diode dv/dt ruggedness dv/dt C C 50 v/ns v r =0..480 v power dissipation p tot C C 1 1 5 w t c = 25c operating and storage temperature t j ;t stg - 55 C 175 c mounting torque C C 6 0 ncm m 3 and m3. 5 screws 3 thermal characteristics table 4 thermal characteristics t o - 2 47 - 3 parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C C 1. 3 0 k/w thermal resistance, junction - ambient r thja C C 62 leaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6mm (0.063 in.) from case for 10 s
thinq! tm sic schottky diode IDW10S120 electrical characteristics final data sheet 5 rev. 2 . 0 , 201 2 - 0 3 - 2 3 4 electrical characteristics table 5 static characteristics parameter symbol values unit note/test condition min. typ. max. dc blocking voltage v dc 120 0 C C v i r = 0.24 ma, t j = 25c diode forward voltage v f C 1.5 1.8 i f = 1 0 a, t j =25c C 2 . 4 C i f = 1 0 a, t j =150c reverse current i r C 5 240 a v r =1200 v, t j =25c C 20 500 v r =1200 v, t j =150c table 6 ac characteristics parameter symbol values unit note/test condition min. typ. max. total capacitive charge q c C 36 C nc v r =400 v, di/dt =200a/ s, i f i f,max , t j =150c. 5 5 C v r =1000 v, di/dt =200a/ s, i f i f,max , t j =150c. total capacitance c C 580 C pf v r =1 v, f =1 mhz C 5 0 C v r =300 v, f =1 mhz C 4 0 C v r =600 v, f =1 mhz
thinq! tm sic schottky diode IDW10S120 electrical characteristics diagrams final data sheet 6 rev. 2 . 0 , 201 2 - 0 3 - 2 3 5 electrical characteristics diagrams table 7 power dissipation d iode forward current p tot =f( t c ) ; r thjc,max i f =f( t c ) ; t j 175c ; r thjc,max ; parameter d =duty cycle table 8 typical forward characteristic s typ . reverse current vs. reverse voltage i f =f( v f ) ; t p =200 s; parameter: t j i r =f( v r ); parameter: t j ; - 55 c 25c 100c 150c 175c - 55 c 25c 100c 150c 175c 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 i f [a] t c [ c] 0.1 0.3 0.5 0.7 1 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i f [ a] v f [v] 1.e - 9 1.e - 8 1.e - 7 1.e - 6 1.e - 5 1.e - 4 200 400 600 800 1000 1200 i r [a] v r [v]
thinq! tm sic schottky diode IDW10S120 electrical characteristics diagrams final data sheet 7 rev. 2 . 0 , 201 2 - 0 3 - 2 3 table 9 typ. capacitance charge vs. current slope 1) max . transient thermal impedance q c =f( di f /dt); v r = 400v; t j = 150c; i f i f,max z th,jc =f( t p ) ; parameter: d= t p / t 1) only capacitive charge, guaranteed by design. table 10 typ. capacitance stored energy typ. capacitance vs. reverse voltage e c =f( v r ) c= f( v r ); t j = 25 c; f =1 mhz 0 5 10 15 20 25 30 35 40 100 300 500 700 900 q c [nc] d i f /dt [a/s] 0.01 0.1 1 1.e - 06 1.e - 03 1.e+00 z th,jc [k/w] t p [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 e c [j] v r [v] 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 c [pf] v r [v]
thinq! tm sic schottky diode IDW10S120 package outlines final data sheet 8 rev. 2 . 0 , 201 2 - 0 3 - 2 3 6 package outlines figure 1 outlines to - 24 7 , dimensions in mm/inches
thinq! tm sic schottky diode idw1 0 s120 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your pr oposal (including a reference to this document) to: erratum@infineon.com edition 201 2 - 0 3 - 2 3 published by infineon technologies ag 81726 munich, germany ? 201 2 infineon technologies ag all rights reserved. legal disclaimer the information given in this doc ument shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, de livery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for informatio n on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or s ystems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or eff ectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. final data sheet 9 r ev. 2 . 0 , 201 2 - 0 3 - 2 3 7 revision history thinq! tm sic schottky diode revision history : 2012 - 0 3 - 2 3 , rev. 2 . 0 previous revision: revision subjects (major changes since last version)
w w w . i n f i n e o n . c o m published by infineon technologies ag
|
